師資介紹
顏志峰
職稱：副教授
最高學歷： 國立中山大學電機工程研究所博士
學術專長： 金氧半元件製程與分析、化合物半導體、太陽能電池
分機： 23374
 

論文著述

研究成果目錄

I.Journal Paper (SCI)

  1. Ming-Kwei Lee, Chih-Feng Yen and Shih-Hao Lin, "Electrical improvements of MOCVD-TiO2 on (NH4)2Sx Treated InP by Post-Metallization Annealing," J. Electrochem. Soc., Vol. 154, pp. G229, Oct. 2007. (SCI, Impact Factor2.42, Material Science-coating & Films 1/18)
  2. Ming-Kwei Lee, Chih-Feng Yen and Shi-Hao Lin, "Low Interface State Density of Liquid Phase Deposited SiO2 Films on (NH4)2Sx Treated InP," J. Electrochem. Soc., Vol. 154, pp. G235, Oct. 2007. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
  3. Ming-Kwei Lee, Jung-Jie Huang, and Chih-Feng Yen, "Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate," J. Electrochem. Soc., Vol. 154, No. 5, pp. G117-G121, Mar. 2007. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
  4. Chih-Feng Yen and Ming-Kwei Lee, “Low leakage current of Liquid Phase Deposited SiO2/TiO2 Stacked Dielectrics on (NH4)2S-treated InP”, J. Electrochem. Soc., Vol. 158, No. 2, pp. G43-G46. 2011. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
  5.  Ming-Kwei Lee, Chen-Lin Ho, Chia-Chi Lin, Nai-Roug Cheng, Ming-Hsuan Houng, Yu-Kai Chien, and Chih-Feng Yen, “Light Extraction Efficiency Enhancement of GaN Blue LED with ZnO Nanotips Prepared by Aqueous Solution Deposition”, J. Electrochem. Soc., Vol. 158, No. 5, D286-D289. 2011. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
  6. Ming-Kwei Lee, Chih-Feng Yen, and Shih-Chen Chiu, “Thin TiO2 Grown by Metal-Organic Chemical Vapor Deposition on (NH4)2Sx Treated InP”, Applied Physics A-Materials Science & Processing., vol. 104, pp. 1175-1180, 2011. (SCI, Impact Factor 1.63, PHYSICS, APPLIED 48/125)
  7. Ming-Kwei Lee and Chih-Feng Yen, “Characterization of Fluorinated-SiO2/PMA-treated TiO2/(NH4)2S-treated GaAs MOS Structure”, J. Electrochem. Soc., Vol. 158, no. 8, G199-G202, 2011. (SCI, Impact Factor 2.42, Material Science-coating & Films 1/18)
  8. Ming-Kwei Lee, Chih-Feng Yen and Sheng-Hsiung Yang, “Electrical Characteristics of Ultrathin Atomic Layer Deposited TiO2 and Al2O3/TiO2 Stacked Dielectrics on (NH4)2Sx-treated InP”, IEEE Transactions on Electron Devices. Vol. 58, no. 11, 3885-3889, 2011. (SCI, Impact Factor 2.255, ENGINEERING, ELECTRICAL & ELECTRONIC, 32/247)
  9. Chih-Feng Yen and Ming-Kwei Lee, “Low Equivalent Oxide Thickness of TiO2/GaAs MOS Capacitor”, Solid-State Electronics. Vol. 73, 56-59, 2012, (SCI, Impact Factor 1.44, ENGINEERING, ELECTRICAL & ELECTRONIC, 80/247)
  10. Chih-Feng Yen and Ming-Kwei Lee, “Very Low Leakage Current of High Band-gap Al2O3 Stacked on TiO2/InP MOS Capacitor with Sulfur and Hydrogen Treatments”, Japanese Journal of Applied Physics. Vol. 51, 081201-1-081201-3, 2012, (SCI, Impact Factor 1.157, Physics-applied 76/125).
  11. Chih-Feng Yen and Ming-Kwei Lee, “Characterization of enhancement-mode N-channel sulfur-treated InP MOSFET with LPD-TiO2 gate oxide”. Journal of Vacuum Science & Technology B. Vol. 30, 052201-1-052201-3, 2012, (SCI, Impact Factor 1.27, ENGINEERING, ELECTRICAL & ELECTRONIC, 99/247)
  12. Ming-Kwei Lee and Chih-Feng Yen, “Low Interface State Density and Low Leakage Current of Atomic Layer Deposited TiO2/Al2O3/Sulfur-treated GaAs”, Physica status solidi (a). Vol. 209, No. 11, 2147-2150, 2012, (SCI, Impact Factor 1.463, Physics-applied 58/125)
  13. Chih-Feng Yen, Ming-Kwei Lee and Jung-Chan Lee, “Electrical characteristics of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)2S-treated GaAs”, Solid-State Electronics. Vol. 94, 1-4, 2014 (SCI, Impact Factor1.44, ENGINEERING, ELECTRICAL & ELECTRONIC, 80/247)
  14. Ming-Kwei Lee and Chih-Feng Yen* (通訊作者), “Characteristics of liquid phase deposited SiO2 on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer”, Jpn. J. Appl. Phys. Vol. 53, 056502-1, 2014. (SCI, Impact Factor 1.27, ENGINEERING, ELECTRICAL & ELECTRONIC, 99/247)
  15. Ming-Kwei Lee and Chih-Feng Yen* (通訊作者), “Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics”, Applied Physics A: Materials Science & Processing. Vol. 116, 2051, 2014. (SCI, Impact Factor 1.63, PHYSICS, APPLIED 48/125)
  16. Ming-Kwei Lee, Chih-Feng Yen* (通訊作者), and Cho-Han Fan, “High Dielectric Constant Nickel-doped Titanium Oxide Films Prepared by Liquid Phase Deposition”, Applied Physics A: Materials Science & Processing. Vol. 116, 2007, 2014. (SCI, Impact Factor 1.63, PHYSICS, APPLIED 48/125)
  17. Chih-Feng Yen, and Ming-Kwei Lee, “Characterization of Enhancement-mode N-channel Sulfur-treated InP MOSFET with Al2O3/TiO2 Gate Oxides Prepared by Atomic Layer Deposition”, Solid-State Electronics. Vol. 100, 1, 2014. (SCI, Impact Factor 1.44, ENGINEERING, ELECTRICAL & ELECTRONIC, 80/247)
  18. Chih-Feng Yen, and Ming-Kwei Lee, “Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations”, Jpn. J. Appl. Phys. Vol. 53, 121201-1-121201-5, 2014. (SCI, Impact Factor 1.157, Physics-applied 76/125)
  19.  Ming-Kwei Lee and Chih-Feng Yen*(通訊作者), “Electrical Characteristics of TiO2/Al2O3/InP Capacitor after Removal of Native Oxides by Atomic Layer Deposited Al2O3 Self-cleaning and (NH4)2S Treatments”, Thin solid films. Vol. 595, 12-16, Oct. 2015. (SCI, Impact Factor 1.72, Material Science-coating & Films 5/17)
  20. Ming-Kwei Lee, Chih-Feng Yen*(通訊作者), and Min-Yen Yeh, “High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments”. Journal of Electronic Materials. Vol. 45, no. 8, 4270-4274. August 2016 (SCI, Impact Factor 1.491, Material Science-coating & Films 5/17)
  21. Chih-Feng Yen, Min-Yen Yeh, Kwok-Keung Chong, Chun-Fa Hsu and Ming-Kwei Lee, “InP MOS Capacitor and E-mode N-channel FET with ALD Al2O3 Based High-k Dielectric”, Applied Physics A: Materials Science & Processing. Vol. 122, Issue 7, 683, 2016. (SCI, Impact Factor 1.63, PHYSICS, APPLIED 48/125)
  22. Min Yen Yeh*, Chitsan Lin, Chi Thanh Vu, Kun Fu Hsu, Shiow Yueh Lee, Wei Ru Li, and Chih-Feng Yen, “Post-calcination effects of sodium tantalate synthesized by microwave-assisted hydrothermal method and its photocatalytic performance under UV and visible light”, Materials Research Bulletin 90 (2017) 182–187

 II.Journal Paper (EI)

  1. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan and Chih-Feng Yen, “Efficiency Improvement of Solar Cell with ZnO Nanotip Array Prepared by Aqueous Solution Deposition”, Advanced Materials Research, Vol. 339 (2011) pp. 283-286. (EI)
  2. Ming Kwei Lee, Chih Feng Yen, Sheng Hsiung Yang, Jung Chan Lee, Chi Hsuan Cheng and Wei Hau Cheng, “Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2S-Treated GaAs”, Advanced Materials Research, vol. 516-517, 1945-1948, 2012. (EI)
  3. Ming-Kwei Lee,Chih-Feng Yen* (通訊作者), “InP Schottky Barrier MOSFET with TiO2/Al2O3as Gate Oxide”, IEEE IS3C2014 International Symposium on Computer, Consumer and Control. IEEE Computer Society. Page 573-576.                      

 

III. Conference Paper

<國際會議期刊>

  1. Ming-Kwei Lee, Jung-Jie Huang, and Chih-Feng Yen, “Low Leakage Current and High Dielectric Constant LPD-SiO2/MOCVD-TiO2 Film Grown on (NH4)2Sx Treated InP Substrate” The 17th Indium Phosphide and Related Materials Conference (IPRM), Glasgow, Scotland, U.K., 2005.
  2. Ming-Kwei Lee, Chih-Feng Yen, Tsung-Hsiang Shih, Chen-Lin Ho, Hung-Chang Lee, Hwai-Fu Tu and Cho-Han Fan, “Electrical characteristics of fluorine passivated MOCVD-TiO2 Film on (NH4)2Sx treated GaAs”, The Fifth China International Conference on High-Performance Ceramics, Changsha, Hunan Province, China, pp. 30, May (2007).
  3. Ming-Kwei Lee, Tsung-Hsiang Shih, Chen-Lin Ho, Hung-Chang Lee, Chih-Feng Yen, Hwai-Fu Tu and Cho-Han Fan, “Photocatalyses of Nano-scaled ZnSe/TiO2 and ZnSe/TiO2 hetrojunctions”, The Fifth China International Conference on High-Performance Ceramics, Changsha, Hunan Province, China, pp. 188, May (2007).
  4. Ming-Kwei Lee,Chih-Feng Yen, Cho-Han Fan, “Enhancement-mode Si MOSFET with MOCVD-TiO2as gate oxide improved by oxygen annealing and fluorine passivation”, The International Conference on Thin Film (ICTF14), Ghent, Belgian, 2008,11,17 to 2008, 11,20.
  5. Ming-Kwei Lee andChih-Feng Yen, “TiO2as Gate Oxide on Enhancement-Mode N-channel Sulfur-Treated InP MOSFET”, The 8th International Symposium, Shanghai, July. 2010.
  6. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan andChih-Feng Yen, “Orientation of ZnO Nanotip Array Controlled by Thickness of ZnO Seed Layer”, 2011 International Conference on Advanced Engineering Materials and Technology (AEMT 2011), Sanya, China, July 29-31, 2011.
  7. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan andChih-Feng Yen, “Efficiency Improvement of Solar Cell with ZnO Nanotip Array Prepared by Aqueous Solution Deposition”, 2011 International Conference on Materials and Products Manufacturing Technology, October 28-30, Chengdu, China.
  8. Ming-Kwei Lee, Nai-Roug Cheng andChih-Feng Yen, “Density of ZnO Nanotip Array Controlled by Thickness of ZnO Seed Layer”, 2ndInternational Advances in Applied Physics and Materials Science (APMAS 2012), from 26 to 29 April 2012 in Antalya, Turkey.
  9. Ming-Kwei Lee andChih-Feng Yen, “Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2S-treated GaAs”.2012 International Conference on Energy and Environmental Protection (ICEEP 2012), Hohhot, China, June 23-24, 2012.
  10. Ming-Kwei Lee, Nai-Roug Cheng, Cho-Han Fan andChih-Feng Yen, “Density of ZnO Nanotip Array Controlled by ZnO Seed Layer”. 2012 International Conference on Nanomaterials and Electronics Engineering ICNEE 2012, July 24-26, 2012, Kuala Lumpur, Malaysia.
  11. Chih-Feng Yen, Min-Yen Yeh, and Ming-Kwei Lee, “Electrical characteristics InP MOSFET with atomic layer deposited nano-Al2O3and TiO2 films as dielectrics", 13th International Conference on N&N, pp. 139, NN16 Conference, Thessaloniki Greece, 5-8 July 2016.
  12. Chih-Feng Yen*, Chun-Fa Hsu, Pei-Wei Chen, Shan-Hsiung Li, “Effect of Hafnium Doping in Indium Zinc Oxide Thin-Film Transistors by Sol-gel Method” 2016 International Conference on Physics and Mechanics of New Materials and Their Applications (PHENMA 2016) pp. 90, Surabaya, Indonesia, July 19-22, 2016.
  13. Min Yen Yeh, Kun Fu Hsu, Chih-Feng Yen, Chyi-Da Yang, Shun-Hsyung Chang, “Synthesization of Nanoparticle Photocatalyst NaTaO3 by Microwave-Assisted Hydrothermal Method” 2016 International Conference on Physics and Mechanics of New Materials and Their Applications (PHENMA 2016) pp. 180, Surabaya, Indonesia, July 19-22, 2016.
  14. Chih-Feng Yen*, I-Hui Lee, Shung-Hyung Chan and Chi-Tsan Lin, “The effect of annealing temperature of titanium oxide film for photocatalytic activity by liquid phase deposition” 2017 IEEE International Conference on Applied System Innovation, pp. 102, May 13-17, 2017, Hotel emisia, Sapporo, Japan (IEEE ICASI BEST PAPER AWARD)
  15. Chih-Feng Yen*, Min Yen Yeh, Shun-Hsyung Chang, Zi-Yang Shen, Ruei-Jun Hong, “Leakage Currents of SB InP Diode with Ultrathin Al2O3 Based Insulator”, 2017 International Conference on “Physics and Mechanics of New Materials and Their Applications” (PHENMA 2017), pp. 44, Jabalpur, India, October 14-16, 2017.
  16. Chih-Feng Yen*, Lyu-Wei Liao, Rui-Jun Hong, “Fabrication of aluminium oxide/silicon MOS capacitor by low temperature chemical solution deposition” The 5th Annual Conference on Engineering and Information Technology, pp. 139, Kyoto, Japan, March 27-29, 2018.
  17. Chih-Feng Yena), Chong-Yi Lee, Min Yen Yeh, Kwok-Keung Chong, Chyi-Da Yang, Ruei-Jun Hong and Shan-Hsiung Li, “The study of hafnium dioxide on Si by non-vacuum deposition process”, 2018 International Conference on “Physics and Mechanics of New Materials and Their Applications” (PHENMA 2018), pp. 44, Jabalpur, India, October 14-16, 2017.
  18. Chih-Feng Yen, Shan-Hsiung Li, Ruei-Jun Hong, Tzu-Yang Shen, Lyu-Wei Liao, Yi-Fan Lu, Shun-Ming Hu, Ming-Chih Tsai, Cheng-Hsien Tsai*, “Study of magnesium oxide dielectric on silicon substrate MOS capacitor by liquid phase deposition”, accepted, 2018 IEEE International Conference on Advanced Manufacturing (IEEE ICAM 2018) will be held in Yunlin, Taiwan on November 16~18, 2018.
  19. Chih-Feng Yen, Shan-Hsiung Li, Ruei-Jun Hong, Tzu-Yang Shen, Lyu-Wei Liao, Tzu-Li Tsai, Chia-Yung Tsou, Wen-Feng Fan, Hao-Rong Yang*, “Non-vacuum process of LPD-HfO2 on Si MOS capacitor with high dielectric constant and low effective oxide charges”, accepted, 2018 IEEE International Conference on Advanced Manufacturing (IEEE ICAM 2018) will be held in Yunlin, Taiwan on November 16~18, 2018.

 IV.Patents

  1. 李明逵、黃俊杰和顏志峰，“一種高介電常數與低漏電流磷化銦金氧半電容的製作方法”，中華民國，發明專利第I 249841號
  2. 李明逵、黃俊杰、顏志峰和吳宗訓，“Method for making a metal oxide semiconductor device”，美國，發明專利，US 7,341,960 B2
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