國立高雄科技大學　半導體工程系

奈米薄膜與元件實驗室

Nano Films and Devices Laboratory

實驗室指導教授：顏志峰老師

實驗室位置：楠梓校區大仁樓6402實驗室

實驗室電話：(07)361-7141轉23383

實驗室簡介

　　本實驗室使用低溫化學溶液沉積法(low temperature chemical solution deposition, LTCSD)製備氧化薄膜，應用於各式半導體元件，如金氧半場效電晶體、太陽電池及光催化等低溫化學溶液沉積法具有設備低廉、易保養維護、大面積沉積、選擇性高、階梯覆蓋率佳及易於製備化合物薄膜。除了高品質二氧化矽薄膜製作外，為了滿足目前新世代積體電路發展對閘極氧化層的要求，本實驗室亦致力於以非真空法製備新穎氧化膜，目前更積極研發高品質之二氧化鈦、氮氧化矽及鐵酸鉍等高介電常數薄膜，期早日投入於未來工業之應用。

實驗室全景

研究領域

1.新穎氧化薄膜研發

2.三五族及矽金氧半電容器製程與分析

3.太陽電池

4.光催化

實驗室儀器設備

高溫爐	超音波震盪機

能使薄膜的性質、均勻度會有較佳的表現，並改善金屬薄膜特性	清洗半導體基板用
磁石攪拌器	熱風循環烘箱

製備沉積溶液用	內部風扇循環，使溫度對流快速均勻分佈，使器具快速除濕
去離子水	精密電子秤

電阻值18.3MΩ，用於清洗半導體	用來調配出極精準之所需材料的質量
真空球	恆溫水槽

局部保持真空避免元件氧化	能簡單控制水槽溫度系統，含有水流循環將水槽控制在所需溫度且恆溫
真空蒸鍍機	晶片清洗台

將所需材料蒸鍍至基板上，形成薄膜電極、半導體膜、絶縁膜等	擺放危險溶液及清洗晶片所在地，含有抽氣系統可把危害人體氣體抽出，避免吸入
旋轉塗佈機	PH 酸鹼計

塗佈化學物質，第一階段的旋轉離心力將物質往外均勻散佈，再透過第二階段的高轉速控制膜厚	檢測溶液的酸鹼值，可使PH達致理想值，使得溶液有更好的表現
內循環藥品櫃	冷卻水機

防止化學藥品氣體外洩，且可抵禦震動使得藥品不會互相碰撞造成碎裂	藉由低溫循環水來降低擴散幫浦溫度用

實驗成果 SCI:

1.Ming-Kwei Lee and Chih-Feng Yen*(通訊作者), “Electrical Characteristics of TiO2/Al2O3/InP Capacitor after Removal of Native Oxides by Atomic Layer Deposited Al2O3 Self-cleaning and (NH4)2S Treatments”, Thin solid films. Vol. 595, 12-16, Oct. 2015. (SCI, Impact Factor72, Material Science-coating & Films 5/17)

2.Ming-Kwei Lee, Chih-Feng Yen*(通訊作者), and Min-Yen Yeh, “High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments”. Journal of Electronic Materials. 45, no. 8, 4270-4274. August 2016 (SCI, Impact Factor 1.491, Material Science-coating & Films 5/17)

3.Chih-Feng Yen, Min-Yen Yeh, Kwok-Keung Chong, Chun-Fa Hsu and Ming-Kwei Lee, InP MOS Capacitor and E-mode N-channel FET with ALD Al2O3 Based High-k Dielectric, Applied Physics A: Materials Science & Processing. Vol. 122, Issue 7, 683, 2016. (SCI, Impact Factor 1.63, PHYSICS, APPLIED 48/125)

4.Min Yen Yeh,*, Chitsan Lin, Chi Thanh Vu, Kun Fu Hsu, Shiow Yueh Lee, Wei Ru Li, and Chih-Feng Yen, Post-calcination effects of sodium tantalate synthesized by microwave-assisted hydrothermal method and its photocatalytic performance under UV and visible light, Materials Research Bulletin 90 (2017) 182–187

國際研討會論文

1.Ming-Kwei Lee and Chih-Feng Yen* (通訊作者), “Electrical characteristics of SiON/GaAs MOS capacitor with various passivations”, ICMME 2015: International Conference on Metallurgical and Materials Engineering. Tokyo, Japan, May, 28-29, 2015.

2.Chih-Feng Yen, Min-Yen Yeh, and Ming-Kwei Lee, “Electrical characteristics InP MOSFET with atomic layer deposited nano-Al₂O₃ and TiO₂ films as dielectrics", 13th International Conference on N&N, pp. 139, NN16 Conference, Thessaloniki Greece, 5-8 July 2016.

3.Chih-Feng Yen*, Chun-Fa Hsu, Pei-Wei Chen, Shan-Hsiung Li, “Effect of Hafnium Doping in Indium Zinc Oxide Thin-Film Transistors by Sol-gel Method” 2016 International Conference on Physics and Mechanics of New Materials and Their Applications (PHENMA 2016) pp. 90, Surabaya, Indonesia, July 19-22, 2016.

4.Min Yen Yeh, Kun Fu Hsu, Chih-Feng Yen, Chyi-Da Yang, Shun-Hsyung Chang, “Synthesization of Nanoparticle Photocatalyst NaTaO₃ by Microwave-Assisted Hydrothermal Method” 2016 International Conference on Physics and Mechanics of New Materials and Their Applications (PHENMA 2016) 180, Surabaya, Indonesia, July 19-22, 2016.

5.Chih-Feng Yen*, I-Hui Lee, Shung-Hyung Chan and Chi-Tsan Lin, “The effect of annealing temperature of titanium oxide film for photocatalytic activity by liquid phase deposition” 2017 IEEE International Conference on Applied System Innovation, pp. 102, May 13-17, 2017, Hotel emisia, Sapporo, Japan (IEEE ICASI BEST PAPER AWARD)

6.Chih-Feng Yen*, Min Yen Yeh, Shun-Hsyung Chang, Zi-Yang Shen, Ruei-Jun Hong, “Leakage Currents of SB InP Diode with Ultrathin Al2O3 Based Insulator”, 2017 International Conference on “Physics and Mechanics of New Materials and Their Applications” (PHENMA 2017), pp. 44, Jabalpur, India, October 14-16, 2017.

7., Shun-Hsyung Chang, Min Yen Yeh, Kwok-Keung Chong, Chyi-Da Yang, Chong-Yi Lee, Lyu-Wei Liao, “Material Analysis of Chemical Vapor Phase Deposited TiO2/Si Diode”, 2017 International Conference on “Physics and Mechanics of New Materials and Their Applications” (PHENMA 2017), pp. 44, Jabalpur, India, October 14-16, 2017.

8.Chih-Feng Yen*, Lyu-Wei Liao, Rui-Jun Hong, “Fabrication of aluminium oxide/silicon MOS capacitor by low temperature chemical solution deposition” The 5th Annual Conference on Engineering and Information Technology, pp. 139, Kyoto, Japan, March 27-29, 2018.

9.Chih-Feng Yen^a), Chong-Yi Lee, Min Yen Yeh, Kwok-Keung Chong, Chyi-Da Yang, Ruei-Jun Hong and Shan-Hsiung Li, “The study of hafnium dioxide on Si by non-vacuum deposition process”, 2018 International Conference on “Physics and Mechanics of New Materials and Their Applications” (PHENMA 2018), pp. 44, Jabalpur, India, October 14-16, 2017.

10.Chih-Feng Yen, Shan-Hsiung Li, Ruei-Jun Hong, Tzu-Yang Shen, Lyu-Wei Liao, Yi-Fan Lu, Shun-Ming Hu, Ming-Chih Tsai, Cheng-Hsien Tsai, “Study of magnesium oxide dielectric on silicon substrate MOS capacitor by liquid phase deposition”, 2018 International Conference on “Advanced Manufacturing”, accepted, will be held in Yunlin, Taiwan, November 16-18, 2018.

11.Chih-Feng Yen, Ruei-Jun Hong, Tzu-Yang Shen, Shan-Hsiung Li, Lyu-Wei Liao, Wen-Feng Fan, Tzu-Li Tsai, Chia-Yung Tsou, Hao-Rong Yang, “Non-vacuum process of LPD-HfO2 on Si MOS capacitor with high dielectric constant and low effective oxide charges”, 2018 International Conference on “Advanced Manufacturing”, accepted, will be held in Yunlin, Taiwan, November 16-18, 2018.